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| Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.9 dB Drain Efficiency -- 30.5% ACPR @ 750 kHz Offset -- - 46.8 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 76 Watts Avg., Full Frequency Band (865 - 895 MHz) Power Gain -- 20 dB Drain Efficiency -- 45% Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM -- 2% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 160 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 58% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S9160HR3 MRF6S9160HSR3 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S9160HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 565 3.2 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S9160HR3 MRF6S9160HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 160 W CW Case Temperature 73C, 35 W CW Symbol RJC Value (1,2) 0.31 0.33 Unit C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 525 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 8 Adc) Dynamic Characteristics(3) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss Crss -- -- 80.2 2.2 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 1 2 0.1 -- 2 3 0.2 9.7 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 20 29 -- -- 20.9 30.5 - 46.8 - 17 23 -- - 45 -9 dB % dBc dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched on input. (continued) MRF6S9160HR3 MRF6S9160HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 76 W Avg., 865 MHz B2 VBIAS + C16 C17 C18 C19 C7 L1 RF INPUT Z1 C1 C3 C4 C6 DUT C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C8 C10 C11 C12 C13 C14 C15 Z9 Z10 C9 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 C2 Z19 B1 R2 + R1 C20 C21 L2 RF OUTPUT C22 C23 C24 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.426 x 0.080 Microstrip 0.813 x 0.080 Microstrip 0.471 x 0.080 Microstrip 0.319 x 0.220 Microstrip 0.171 x 0.220 Microstrip 0.200 x 0.425 x 0.630 Taper 0.742 x 0.630 Microstrip 0.233 x 0.630 Microstrip 0.128 x 0.630 Microstrip 0.134 x 0.630 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.066 x 0.630 Microstrip 0.630 x 0.425 x 0.220 Taper 0.120 x 0.220 Microstrip 0.292 x 0.220 Microstrip 0.023 x 0.220 Microstrip 0.030 x 0.220 Microstrip 0.846 x 0.080 Microstrip 0.440 x 0.080 Microstrip 0.434 x 0.080 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55 Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 C1, C2, C19 C3, C11 C4 C5, C6 C7, C8 C9, C10 C12 C13, C14 C15 C16 C17 C18 C20 C21, C22, C23 C24 L1, L2 R1 R2 Description Ferrite Beads, Small 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 2.7 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 3.9 pF Chip Capacitors 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 F, 50 V Tantalum Capacitor 20K pF Chip Capacitor 180 pF Chip Capacitor 10 F, 50 V Chip Capacitors (2220) 470 F, 63 V Electrolytic Capacitor 10 nH Inductors 180 Chip Resistor 10 Chip Resistor Part Number 2743019447 100B470JP500X 27291SL 100B2R7JP500X 100B150JP500X 100B120JP500X 100B4R3JP500X 100B8R2JP500X 100B3R9JP500X 27271SL 100B220JP500X T491C105K0J0AS CDR353P203AK0S 100B181JP500X GRM55DR61H106KA88B KME63VB471M12x25LL 0603HC Manufacturer Fair Rite ATC Johanson ATC ATC ATC ATC ATC ATC Johanson ATC Kemit Kemit ATC Murata United Chemi - Con Coilcraft MRF6S9160HR3 MRF6S9160HSR3 4 RF Device Data Freescale Semiconductor C16 B1 900 MHz Rev. 2 C18 R2 B2 C24 C17 C21 C22 C23 R1 C19 C20 L1 C5 C7 C9 L2 C14 C1 CUT OUT AREA C2 C3 C4 C6 C12 C13 C8 C10 C11 C15 Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout MRF6S9160HR3 MRF6S9160HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 20.9 20.6 20.3 Gps, POWER GAIN (dB) 20 19.7 19.4 19.1 18.8 18.5 18.2 17.9 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) ALT1 ACPR IRL VDD = 28 Vdc, Pout = 35 W (Avg.) IDQ = 1200 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D Gps 32 30 28 26 24 -40 -45 -50 -55 -60 -65 920 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -8 -11 -14 -17 -20 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -3 -6 -9 -12 -15 -18 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg. 20.3 20 19.7 Gps, POWER GAIN (dB) 19.4 19.1 18.8 18.5 18.2 17.9 17.6 17.3 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) ALT1 ACPR IRL VDD = 28 Vdc, Pout = 70 W (Avg.) IDQ = 1200 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D Gps 44 42 40 38 36 -30 -36 -42 -48 -54 -60 920 Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg. 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 400 600 mA VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing 1200 mA 900 mA IDQ = 1800 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 1500 mA -10 -20 -30 IDQ = 600 mA -40 900 mA -50 -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 400 1500 mA 1200 mA 1800 mA VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements, 100 kHz Tone Spacing Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9160HR3 MRF6S9160HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 -60 -70 VDD = 28 Vdc, IDQ = 1200 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IMD, INTERMODULATION DISTORTION (dBc) -10 0 -10 -20 -30 -40 -50 7th Order -60 0.1 1 10 100 TWO-TONE SPACING (MHz) 3rd Order VDD = 28 Vdc, Pout = 70 W (Avg.) IDQ = 1200 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 3rd Order 5th Order 5th Order 7th Order -80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 400 Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 61 Pout, OUTPUT POWER (dBm) 59 P6dB = 54.7 dBm (294.78 W) Ideal P3dB = 53.98 dBm (249.98 W) 57 55 53 51 49 47 26 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 28 30 32 34 36 38 40 P1dB = 53.02 dBm (200.36 W) Actual Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 20 10 ALT1 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 -80 300 VDD = 28 Vdc, IDQ = 1200 mA f = 880 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) TC = -30_C 25_C -30 -30_C 85_C ACPR Gps -30_C -60 D 85_C 25_C -70 85_C -40 25_C -50 ACPR (dBc), ALT1 (dBc) -20 Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9160HR3 MRF6S9160HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 23 -30_C 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 1200 mA f = 880 MHz 25_C TC = -30_C Gps 85_C 70 60 50 40 30 D 20 10 0 300 D, DRAIN EFFICIENCY (%) 85_C Figure 11. Power Gain and Drain Efficiency versus CW Output Power 21 20 Gps, POWER GAIN (dB) 19 18 16 V VDD = 12 V 16 0 50 100 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW 20 V 28 V 24 V IDQ = 1200 mA f = 880 MHz 32 V 17 Figure 12. Power Gain versus Output Power 1010 MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9160HR3 MRF6S9160HSR3 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 1.2288 MHz Channel BW . . ... ...... .... ......... .................................. . . ... . .. . . . . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . .... ............. ....... ........... ...... .... .. ..... ... . ......... ........ .... . . .. .... . . ....... ....... .......... ...... .. ...... .... ..... . .. ... ...... . .. ..... ..... .. .... . ...... . .. ....... .... ....... .. ..... ..... . .. . ...... .. ... ........ -ACPR in 30 kHz .... .. . +ACPR in 30 kHz ............. ... ......... . .... .. ............ .... ......... .. ............. Integrated BW Integrated BW .. .. ........ ............. .... .. .. .. .... ... ........ . . Figure 14. Single - Carrier CCDF N - CDMA -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9160HR3 MRF6S9160HSR3 RF Device Data Freescale Semiconductor 9 f = 910 MHz Zload f = 850 MHz Zo = 2 f = 910 MHz Zsource f = 850 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. f MHz 850 865 880 895 910 Zsource 0.61 - j1.27 0.66 - j1.15 0.64 - j1.05 0.55 - j0.90 0.48 - j0.74 Zload 1.20 + j0.03 1.26 + j0.15 1.31 + j0.22 1.32 + j0.28 1.26 + j0.32 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9160HR3 MRF6S9160HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF6S9160HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF6S9160HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S9160HR3 MRF6S9160HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S9160HR3 MRF6S9160HSR3 Rev. 12 1, 5/2006 Document Number: MRF6S9160H RF Device Data Freescale Semiconductor |
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